Quinas-Ultraram™ Memory - Future Compute/Ai & Space

quinas.tech

ULTRARAM™ by Quinas Technology is a next-generation semiconductor memory combining the speed of DRAM with the non-volatility of flash, delivering ultra-low power, high-performance, and high-endurance storage in a single device. Developed from breakthrough research at Lancaster University, ULTRARAM™ harnesses resonant tunnelling—a quantum mechanical effect—to achieve industry-first performance across power efficiency, speed, and data retention. With applications spanning edge AI, Future Compute, data centres, automotive, aerospace, and defence, ULTRARAM™ addresses the growing demand for fast, energy-efficient, and reliable memory in both commercial and dual-use markets. Key Benefits: Ultra-efficient: Reduces power consumption and extends battery life Non-volatile: Retains data with zero power—instant-on and power-failure resilience High endurance: Reliable performance under heavy workloads High speed: Comparable to DRAM, but with persistent data Low carbon: Ideal for energy-sensitive and sustainability-focused systems Quinas is redefining what memory can do—unlocking the next era of intelligent, low-power computing.